SO-DIMM

Features Component for: Laptop Memory layout (modules x size): 1 x 4 GB Memory clock speed: 1600 MHz Memory voltage: 1.35 V Product colour: Green CAS latency: 11 Module configuration: 512M x 8 Internal memory type: DDR3L Memory form factor: 204-pin S

Product Properties Product Description SILICON POWER - DDR3L - module - 4 GB - SO-DIMM 204-pin - 1600 MHz / PC3L-12800 - unbuffered

Features Internal memory type: DDR3 Memory layout (modules x size): 1 x 4 GB Buffered memory type: Unregistered (unbuffered) Memory channels: Single-channel Component for: Laptop ECC: No Internal memory: 4 GB Memory form factor: 204-pin SO-DIMM Memor

Features Internal memory: 4 GB Memory channels: Single Memory layout (modules x size): 1 x 4 GB Component for: Laptop Internal memory type: DDR3 Memory clock speed: 1600 MHz Memory voltage: 1.35 V

Features Component for: Laptop Memory voltage: 1.35 V Memory layout (modules x size): 1 x 4 GB Internal memory: 4 GB Memory channels: Single Memory clock speed: 1333 MHz Internal memory type: DDR3

Features Memory form factor: 204-pin SO-DIMM ECC: No Memory voltage: 1.5 V Component for: PC Internal memory: 4 GB Internal memory type: DDR3 Memory channels: Single-channel Memory clock speed: 1333 MHz Memory layout (modules x size): 1 x 4 GB Buffer

Series: TEAM ELITE Format: SODIMM Type: DDR4 Capacity: 4GB No. modules: 1 Speed: 2666 MHz / 21300 MBs Latence: 19-19-19-43 DIMM type: Unbuffered ECC: NON-ECC No. pins: 260 Voltage: 1.2V The ELITE series is a new product that complies with the JEDEC i

Features Internal memory type: DDR3 Component for: Notebook CAS latency: 11 Module configuration: 512M x 8 Memory channels: Single Memory layout (modules x size): 1 x 4 GB Product colour: Green Memory clock speed: 1600 MHz Memory voltage: 1.35 V Inte

Features Internal memory type: DDR3 Component for: Notebook Memory layout (modules x size): 1 x 4 GB CAS latency: 11 Internal memory: 4 GB Memory clock speed: 1600 MHz Memory voltage: 1.5 V Product colour: Green

- Data rate: 2400MHz - Pin: 260-Pin - Bandwidth: 19.2GB/sec - CAS Latency: CL=17 - Voltage (VDD): 1.2V - Capacity: 4GB - Internal Banks: 16 - Operating temperature: 0C - 70C - Comply with JEDEC standards - Selected high-quality IC chips - High stabil

Features Certification: RoHS Memory form factor: 204-pin SO-DIMM Memory layout (modules x size): 1 x 4 GB Buffered memory type: Unregistered (unbuffered) Internal memory type: DDR3 Internal memory: 4 GB CAS latency: 11 Component for: Laptop Memory ty

Features Certification: RoHS CAS latency: 11 Component for: Laptop ECC: No Memory layout (modules x size): 1 x 4 GB Buffered memory type: Unregistered (unbuffered) Internal memory type: DDR3 Memory form factor: 204-pin SO-DIMM Memory clock speed: 160

Features Buffered memory type: Unregistered (unbuffered) Module configuration: 512M x 8 Component for: Laptop ECC: No CAS latency: 11 Memory clock speed: 1600 MHz Memory voltage: 1.35 V Memory form factor: 204-pin SO-DIMM Internal memory type: DDR3L

Features Component for: Laptop Memory clock speed: 1600 MHz Memory channels: Single Internal memory type: DDR3 Memory layout (modules x size): 1 x 8 GB Memory voltage: 1.5 V Internal memory: 8 GB

Features Component for: Laptop Memory channels: Single Internal memory type: DDR3 Memory layout (modules x size): 1 x 8 GB Internal memory: 8 GB Memory voltage: 1.5 V Memory clock speed: 1333 MHz

Features Memory channels: Single Memory layout (modules x size): 1 x 8 GB Memory clock speed: 1333 MHz Component for: Laptop Memory voltage: 1.35 V Internal memory type: DDR3 Internal memory: 8 GB

Series: Signature Line Format: SODIMM Type: DDR4 Capacity: 4GB No. Pins: 260 No. modules: 1 Speed: PC4-21300 / 2666 MHz Latency: 19-19-19-39 ECC: NON-ECC (One) 1 Rank Single-sided Voltage: 1.2V

Features Memory clock speed: 1600 MHz Memory channels: Single-channel Memory layout (modules x size): 1 x 4 GB Component for: Laptop Memory voltage: 1.35 V Internal memory type: DDR3 CAS latency: 11 Internal memory: 4 GB

Features Memory form factor: 204-pin SO-DIMM Buffered memory type: Unregistered (unbuffered) Memory layout (modules x size): 1 x 4 GB Memory clock speed: 1066 MHz Memory voltage: 1.5 V CAS latency: 11 ECC: No Internal memory type: DDR3 Internal memor

Features Internal memory type: DDR3 Memory voltage: 1.35 V Internal memory: 8 GB Memory channels: Single Memory layout (modules x size): 1 x 8 GB Memory clock speed: 1600 MHz Component for: Laptop

Product Properties Product Description SILICON POWER - DDR3 - module - 8 GB - SO-DIMM 204-pin - 1600 MHz / PC3-12800 - unbuffered

Guaranteed quality & Lifetime warranty - The DDR3 SODIMM adopts selected original memory module and is 100% factory-tested to guarantee the high stability, durability and compatibility. Furthermore, the DDR3 SODIMM is backed by a lifetime warranty to

Features Component for: Laptop ECC: No Memory clock speed: 1600 MHz Memory voltage: 1.5 V Buffered memory type: Unregistered (unbuffered) Internal memory: 8 GB Internal memory type: DDR3 Memory layout (modules x size): 1 x 8 GB CAS latency: 11 Memory

Features Internal memory type: DDR3 Component for: Notebook Memory form factor: 204-pin SO-DIMM CAS latency: 11 Memory clock speed: 1600 MHz Memory layout (modules x size): 1 x 8 GB Cooling type: Heatsink Memory voltage: 1.35 V Internal memory: 8 GB