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Features Row active time: 29.25 ns Refresh row cycle time: 260 ns Module configuration: 1024M x 64 CAS latency: 16 Intel Extreme Memory Profile (XMP) version: 2.0 Programming power voltage (VPP): 2.5 V Memory layout (modules x size): 2 x 8 GB Row cyc

Features ECC: No Memory data transfer rate: 3200 MT/s CAS latency: 16 Lead plating: Gold Country of origin: China Module configuration: 1024M x 64 Programming power voltage (VPP): 2.5 V Intel Extreme Memory Profile (XMP): Yes Memory clock speed: 1600

Features Buffered memory type: Unregistered (unbuffered) Memory voltage: 1.2 Component for: PC/Server Internal memory type: DDR4 Internal memory: 16 GB Memory layout (modules x size): 2 x 8 GB Memory voltage: 1.35 V Product colour: Black Memory clock

Features Buffered memory type: Unregistered (unbuffered) RoHS compliance: Y Intel Extreme Memory Profile (XMP) version: 2.0 Memory form factor: 288-pin DIMM Memory layout (modules x size): 2 x 8 GB Internal memory type: DDR4 Component for: PC/server

Crucial 500 GB CT500P3PSSD8 P3 Plus 2280 M.2 SSD NVMe PCIe Gen 4.0x4 4700MB s Read 1900MB s Write 3D-NAND TBW: 110TB Više informacija možete pogledati ovdje

Technical DetailsPurposeSchlauch- / TubeanschlussWater cooling connector typescrew connectionWakü-AnschlüsseG1/4" Aussengewinde, Schlauchanschluss 13/10 mmInner Diameter10 mmSuitable for HardtubingneinAnglegerade, kein WinkelRotatableneinConnector co

Technical DetailsPurposeSchlauch- / TubeanschlussWater cooling connector typescrew connectionWakü-AnschlüsseG1/4" Aussengewinde, Schlauchanschluss 13/10 mmInner Diameter10 mmSuitable for HardtubingneinAnglegerade, kein WinkelRotatableneinConnector co

- Capacity: 250GB - Interface: SATA 6 Gbps - Form Factor: 2.5" - Read/write speeds of up to 560/530 MB/s - Encryption: Class 0 (AES 256) TCG/Opal v2.0, MS eDrive (IEEE1667) - TRIM Supported - S.M.A.R.T Supported - Cache Memory: Samsung 512 MB Low Pow

Technical DetailsFilter typefilter setmagneticyesPrimary colourblackMaterialpolyester