SO-DIMM

Product Properties Product Description SILICON POWER - DDR3L - module - 4 GB - SO-DIMM 204-pin - 1600 MHz / PC3L-12800 - unbuffered

Features Component for: Laptop Memory voltage: 1.35 V Memory layout (modules x size): 1 x 4 GB Internal memory: 4 GB Memory channels: Single Memory clock speed: 1333 MHz Internal memory type: DDR3

Features Internal memory: 4 GB Memory channels: Single Memory layout (modules x size): 1 x 4 GB Component for: Laptop Internal memory type: DDR3 Memory clock speed: 1600 MHz Memory voltage: 1.35 V

Features Internal memory: 4 GB Product colour: Green Memory clock speed: 1333 MHz Component for: Laptop Internal memory type: DDR3 Memory voltage: 1.5 V Module configuration: 512M x 4 Memory channels: Single CAS latency: 9 Memory layout (modules x si

Features Internal memory type: DDR3 Component for: Notebook CAS latency: 11 Module configuration: 512M x 8 Memory channels: Single Memory layout (modules x size): 1 x 4 GB Product colour: Green Memory clock speed: 1600 MHz Memory voltage: 1.35 V Inte

Features Internal memory type: DDR3 Component for: Notebook Memory layout (modules x size): 1 x 4 GB CAS latency: 11 Internal memory: 4 GB Memory clock speed: 1600 MHz Memory voltage: 1.5 V Product colour: Green

Series: TEAM ELITE Format: SODIMM Type: DDR4 Capacity: 4GB No. modules: 1 Speed: 2666 MHz / 21300 MBs Latence: 19-19-19-43 DIMM type: Unbuffered ECC: NON-ECC No. pins: 260 Voltage: 1.2V The ELITE series is a new product that complies with the JEDEC i

- Data rate: 2400MHz - Pin: 260-Pin - Bandwidth: 19.2GB/sec - CAS Latency: CL=17 - Voltage (VDD): 1.2V - Capacity: 4GB - Internal Banks: 16 - Operating temperature: 0C - 70C - Comply with JEDEC standards - Selected high-quality IC chips - High stabil

Features Component for: Laptop Memory channels: Single Internal memory type: DDR3 Memory layout (modules x size): 1 x 8 GB Internal memory: 8 GB Memory voltage: 1.5 V Memory clock speed: 1333 MHz

For TEAM ELITE DDR3 memory modules, TEAMGROUP Inc. adheres to the consistent principle of quality by insisting on the adoption of high quality standards and carefully selected quality components, in addition to strict production procedures and testin

Features Memory form factor: 204-pin SO-DIMM Buffered memory type: Unregistered (unbuffered) Memory layout (modules x size): 1 x 4 GB Memory clock speed: 1066 MHz Memory voltage: 1.5 V CAS latency: 11 ECC: No Internal memory type: DDR3 Internal memor

Features Certification: RoHS Memory form factor: 204-pin SO-DIMM Memory layout (modules x size): 1 x 4 GB Buffered memory type: Unregistered (unbuffered) Internal memory type: DDR3 Internal memory: 4 GB CAS latency: 11 Component for: Laptop Memory ty